High-performance C60 n-channel organic field-effect transistors through optimization of interfaces

نویسندگان

  • Xiao-Hong Zhang
  • Bernard Kippelen
چکیده

Related Articles Analysis of micro-Raman spectra combined with electromagnetic simulation and stress simulation for local stress distribution in Si devices Appl. Phys. Lett. 101, 243511 (2012) The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zeropotential position Appl. Phys. Lett. 101, 243302 (2012) Stable n-channel metal-semiconductor field effect transistors on ZnO films deposited using a filtered cathodic vacuum arc Appl. Phys. Lett. 101, 243508 (2012) Role of barrier structure in current collapse of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 101, 243506 (2012) The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zeropotential position APL: Org. Electron. Photonics 5, 267 (2012)

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تاریخ انتشار 2012